N-Fused BDOPV: a tetralactam derivative as a building block for polymer field-effect transistors.

نویسندگان

  • Yue Cao
  • Jing-Song Yuan
  • Xu Zhou
  • Xiao-Ye Wang
  • Fang-Dong Zhuang
  • Jie-Yu Wang
  • Jian Pei
چکیده

An N-fused BDOPV derivative, NBDOPV, was designed and synthesized. The photophysical and electrochemical properties of NBDOPV were systematically investigated. The NBDOPV-based conjugated polymer PITET shows a large hole mobility of 1.92 cm(2) V(-1) s(-1).

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Symmetrical, Low-Power, and High-Speed 1-Bit Full Adder Cells Using 32nm Carbon Nanotube Field-effect Transistors Technology (TECHNICAL NOTE)

Carbon nanotube field-effect transistors (CNFETs) are a promising candidate to replace conventional metal oxide field-effect transistors (MOSFETs) in the time to come. They have considerable characteristics such as low power consumption and high switching speed. Full adder cell is the main part of the most digital systems as it is building block of subtracter, multiplier, compressor, and other ...

متن کامل

Ballistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2

Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...

متن کامل

Design and Optimization of Input-Output Block using Graphene Nano-ribbon Transistors

In the electronics industry, scaling and optimization is final goal. But, according to ITRS predictions, silicon as basic material for semiconductors, is facing physical limitation and approaching the end of the path. Therefore, researchers are looking for the silicon replacement. Until now, carbon and its allotrope, graphene, look to be viable candidates. Among different circuits, IO block is ...

متن کامل

Modeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions

It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...

متن کامل

Direct-written polymer field-effect transistors operating at 20 MHz

Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Chemical communications

دوره 51 52  شماره 

صفحات  -

تاریخ انتشار 2015